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| PNP Silicon Switching Transistor High DC current gain 0.1 mA to 100 mA q Low collector-emitter saturation voltage q Complementary type: PZT 3904 (NPN) q PZT 3906 Type PZT 3906 Marking ZT 3906 Ordering Code (tape and reel) Q62702-Z2030 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 80 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values 40 40 5 200 1.5 150 - 65 ... + 150 Unit V mA W C 117 47 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 PZT 3906 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IB = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 Collector-emitter cutoff current VCE = 30 V, + VBE = 0.5 V Collector-base cutoff current VCE = 30 V, + VBE = 0.5 V DC current gain1) IC = 0.1 mA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Base-emitter saturation voltage1) IC = 10 mA, IC = 1 mA IC = 50 mA, IC = 5 mA V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 ICEV IBEV hFE 60 80 100 60 30 VCEsat - - VBEsat - - - - 0.85 0.95 - - 0.25 0.4 - - - - - - - 300 - - V 40 40 5 - - - - - - - - - - - - 50 50 50 - nA V Values typ. max. Unit 1) Pulse test conditions: t 300 s, D = 2 % Semiconductor Group 2 PZT 3906 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 100 A, VCE = 5 V, RS = 1 k, f= 10 Hz to 15.7 kHz Input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz VCC = 3 V, IC = 10 mA, IB1 = 1 mA VBE(off) = 0.5 V Delay time Rise time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Storage time Fall time (see diagrams) fT Cobo Cibo F 250 - - - - - - - - 4.5 10 4 dB MHz pF Values typ. max. Unit h11e h12e h21e h22e 2 0.1 100 3 - - - - 12 10 400 60 k 10- 4 - S td tr tstg tf - - - - - - - - 35 35 225 75 ns ns ns ns Semiconductor Group 3 PZT 3906 Switching Times Turn-on time when switched from + VBEoff = 0.5 V to - VBEon = 10.6 V, - ICon = 10 mA; - IBon = 1 mA Input waveform; tr < 1 ns; tp = 300 ns; = 0.02. Turn-off time ICon = 10 mA; IBon = - IBoff = 1 mA Delay and rise time test circuit; total shunt capacitance of test jig and connectors CS < 4 pF; scope impedance = 10 M. Input waveform; tf < 1 ns; 10 s < tp 500 s; = 0.02. Storage and fall time test circuit; total shunt capacitance of test jig and connectors CS < 4 pF; scope impedance = 10 M. Semiconductor Group 4 PZT 3906 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Saturation voltage IC = f (VBEsat, VCEsat) hFE = 10 DC current gain hFE = f (IC) VCE = 1 V, normalized Permissible pulse load Ptot max / Ptot DC = f (tp) Semiconductor Group 5 |
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